This book presents the art of advanced MOSFET modeling for integrated circuit simulation and design. It provides the essential mathematical. BSIM and IC simulation. Circuit simulation and compact models. BSIM – the beginning. BSIM3 – a compact model based on new MOSFET physics. : BSIM4 and MOSFET Modeling for IC Simulation (International Series on Advanced in Solid State Electronics and Technology).
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Connections of a multi-transistor stack. Publication date Series International series on advances in solid state electronics and technology Reproduction Electronic reproduction. Skip to search Skip to main content. BSIM4 flicker noise models. Velocity saturation and velocity overshoot. Series International series on advances in solid state electronics and technology. Find it at other libraries via WorldCat Limited preview. Bibliography Includes bibliographical references and index.
Charge and capacitance models. It provides the essential mathematical and physical analyses of all the electrical, mechanical and thermal effects in MOS transistors relevant to the operation of integrated circuits. The intent of this book ch.
Circuit simulation and compact models. Source and drain of a transistor with multiple gate fingers. BSIM4 diode charge and capacitance .
Source and drain area and perimeter calculation. BSIM4 channel thermal noise models. Junction diode IV and CV models.
Intrinsic charge and capacitance models. Saturation junction leakage current and zero-bias capacitance models. Nielsen Book Data Channel DC current and output resistance.
BSIM4 and MOSFET Modeling for IC Simulation – Weidong Liu, Chenming Hu – Google Books
Gate direct-tunneling current theory and model. Non-quasi-static and parasitic gate and body resistances. Source and drain parasitics: Special attention is paid to MOSFET characterization and model parameter extraction methodologies, making the book particularly useful for those interested or already engaged in work in the areas of semiconductor devices, compact modeling for SPICE simulation, and integrated circuit design. Responsibility Weidong Liu, Chenming Hu.
Physical description xix, p. Channel current in subthreshold and linear operations. Imprint Singapore ; Hackensack, N.
Introduction and chapter objectives. Gate direct-tunneling and body currents.
BSIM4 and MOSFET Modeling For IC Simulation – Semantic Scholar
Diode temperature-dependence model . ISBN electronic smiulation. Time discretization, equation linearization and matrix stamping. Output resistance in saturation region. Review of the charge-deficit transient NQS model. Describe the connection issue.
Single continuous channel charge model. Available to subscribing institutions. The discussion covers the theory and methodology of how a MOSFET model, or semiconductor device models in general, can be bsim to be robust and efficient, turning device physics theory into a production-worthy SPICE simulation model.
BSIM4 junction leakage due to trap-assisted tunneling .